AlN / Al2O3 Ceramic Semiconductor Package For Power Device RF Module Encapsulation

Brand Name: XQCERA
Model Number: Customization
Place of Origin: Hunan, China
Certification: IATF16949;ISO9001
MOQ: 100
Price: Customization
Delivery Time: 20-30 working days
Payment Terms: TT wire transfer
Standard Packaging: Carton; Pallet
Product Details
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Al2O3 Ceramic Semiconductor

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AlN Ceramic Semiconductor

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Ceramic Semiconductor Package

Material: Zirconia Ceramic (ZrO₂, Y-TZP)
Purity: ≥94% / ≥95% (custom Grades Available)
Density: ≥6.0 G/cm³
Fracture Toughness: 6–10 MPa·m½
Flexural Strength: ≥900–1200 MPa
Hardness: ≥88–92 HRA
Color: White / Black / Customized
Max Working Temperature: 800–1600°C
Surface Finish: Polished / Ground
Thermal Shock Resistance: Excellent
Electrical Insulation: Excellent
Corrosion Resistance: Excellent
Wear Resistance: Excellent
Customization: Size, Tolerance, Diameter, Thickness,holes, Metallization Optional
Product Description
Detailed Specifications & Features
Ceramic Semiconductor Package | High Thermal Conductivity AlN/Al2O3 for Power Device (IGBT, MOSFET) & RF Module Encapsulation
High-performance ceramic semiconductor packages featuring exceptional thermal conductivity using AlN (Aluminum Nitride) and Al₂O₃ (Aluminum Oxide) materials. Engineered for superior heat dissipation and reliable performance in demanding electronic applications.
Key Features
  • Exceptional thermal conductivity for efficient heat management
  • Available in AlN and Al₂O₃ ceramic formulations
  • Superior electrical insulation properties
  • Excellent mechanical strength and durability
  • High temperature stability and reliability
  • Precision manufacturing for consistent performance
Primary Applications
  • Power Device Encapsulation (IGBT, MOSFET)
  • RF Module Packaging and Protection
  • High-power semiconductor devices
  • Advanced electronic systems requiring thermal management
  • Industrial power electronics
  • Telecommunications equipment
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